| Hersteller | |
| Hersteller-Teilenummer | STP18N60M2 |
| EBEE-Teilenummer | E8726098 |
| Gehäuse | TO-220 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 600V 13A 0.255Ω@10V,6.5A 110W 2V@250uA 1 N-channel TO-220-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.4233 | $ 1.4233 |
| 10+ | $1.2064 | $ 12.0640 |
| 50+ | $1.0876 | $ 54.3800 |
| 100+ | $0.9515 | $ 95.1500 |
| 500+ | $0.8929 | $ 446.4500 |
| 1000+ | $0.8660 | $ 866.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STP18N60M2 | |
| RoHS | ||
| RDS(on) | 255mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 1.3pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 110W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 13A | |
| Ciss-Input Capacitance | 791pF | |
| Gate Charge(Qg) | 21.5nC@480V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.4233 | $ 1.4233 |
| 10+ | $1.2064 | $ 12.0640 |
| 50+ | $1.0876 | $ 54.3800 |
| 100+ | $0.9515 | $ 95.1500 |
| 500+ | $0.8929 | $ 446.4500 |
| 1000+ | $0.8660 | $ 866.0000 |
