| Hersteller | |
| Hersteller-Teilenummer | STP150N10F7 |
| EBEE-Teilenummer | E8457440 |
| Gehäuse | TO-220 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 100V 110A 0.0036Ω@10V,55A 250W 2.5V@250uA 1 N-channel TO-220 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.2385 | $ 1.2385 |
| 10+ | $1.0377 | $ 10.3770 |
| 50+ | $0.8594 | $ 42.9700 |
| 100+ | $0.7341 | $ 73.4100 |
| 500+ | $0.6795 | $ 339.7500 |
| 1000+ | $0.6554 | $ 655.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STP150N10F7 | |
| RoHS | ||
| RDS(on) | 3.6mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 67pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 250W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 110A | |
| Ciss-Input Capacitance | 8.115nF | |
| Gate Charge(Qg) | 117nC@50V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.2385 | $ 1.2385 |
| 10+ | $1.0377 | $ 10.3770 |
| 50+ | $0.8594 | $ 42.9700 |
| 100+ | $0.7341 | $ 73.4100 |
| 500+ | $0.6795 | $ 339.7500 |
| 1000+ | $0.6554 | $ 655.4000 |
