| Hersteller | |
| Hersteller-Teilenummer | STN3P6F6 |
| EBEE-Teilenummer | E8457494 |
| Gehäuse | SOT-223 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 60V 3A 2.6W 0.16Ω@10V,1.5A 2V@250uA 1 Piece P-Channel SOT-223 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6879 | $ 0.6879 |
| 10+ | $0.5601 | $ 5.6010 |
| 30+ | $0.4954 | $ 14.8620 |
| 100+ | $0.4323 | $ 43.2300 |
| 500+ | $0.3787 | $ 189.3500 |
| 1000+ | $0.3597 | $ 359.7000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STN3P6F6 | |
| RoHS | ||
| RDS(on) | 160mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 20pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 2.6W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Current - Continuous Drain(Id) | 3A | |
| Ciss-Input Capacitance | 340pF | |
| Gate Charge(Qg) | 6.4nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6879 | $ 0.6879 |
| 10+ | $0.5601 | $ 5.6010 |
| 30+ | $0.4954 | $ 14.8620 |
| 100+ | $0.4323 | $ 43.2300 |
| 500+ | $0.3787 | $ 189.3500 |
| 1000+ | $0.3597 | $ 359.7000 |
