| Hersteller | |
| Hersteller-Teilenummer | STL7N10F7 |
| EBEE-Teilenummer | E82970143 |
| Gehäuse | VDFN-8-Power |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 100V 7A 2.9W 0.035Ω@10V,3.5A 2.5V@250uA 1 N-channel VDFN-8-Power MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.5280 | $ 1.5280 |
| 10+ | $1.2780 | $ 12.7800 |
| 30+ | $1.1398 | $ 34.1940 |
| 100+ | $0.9845 | $ 98.4500 |
| 500+ | $0.9162 | $ 458.1000 |
| 1000+ | $0.8852 | $ 885.2000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STL7N10F7 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 35mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 19pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 2.9W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Current - Continuous Drain(Id) | 7A | |
| Ciss-Input Capacitance | 920pF | |
| Gate Charge(Qg) | 14nC@50V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.5280 | $ 1.5280 |
| 10+ | $1.2780 | $ 12.7800 |
| 30+ | $1.1398 | $ 34.1940 |
| 100+ | $0.9845 | $ 98.4500 |
| 500+ | $0.9162 | $ 458.1000 |
| 1000+ | $0.8852 | $ 885.2000 |
