| Hersteller | |
| Hersteller-Teilenummer | STFW3N170 |
| EBEE-Teilenummer | E8222077 |
| Gehäuse | TO-3PF-3 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 1.7kV 2.6A 13Ω@10V,1.3A 63W 5V@250uA 1 N-channel TO-3PF-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.4046 | $ 2.4046 |
| 10+ | $2.0416 | $ 20.4160 |
| 30+ | $1.8151 | $ 54.4530 |
| 100+ | $1.5822 | $ 158.2200 |
| 500+ | $1.4778 | $ 738.9000 |
| 1000+ | $1.4312 | $ 1431.2000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STFW3N170 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 13Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | - | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 63W | |
| Drain to Source Voltage | 1.7kV | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 2.6A | |
| Ciss-Input Capacitance | 1.1nF | |
| Gate Charge(Qg) | 44nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.4046 | $ 2.4046 |
| 10+ | $2.0416 | $ 20.4160 |
| 30+ | $1.8151 | $ 54.4530 |
| 100+ | $1.5822 | $ 158.2200 |
| 500+ | $1.4778 | $ 738.9000 |
| 1000+ | $1.4312 | $ 1431.2000 |
