| Hersteller | |
| Hersteller-Teilenummer | STFU16N65M2 |
| EBEE-Teilenummer | E8501000 |
| Gehäuse | TO-220FP |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 650V 11A 0.36Ω@10V,5.5A 25W 4V@250uA 1 N-channel TO-220FP MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.8618 | $ 1.8618 |
| 10+ | $1.5701 | $ 15.7010 |
| 50+ | $1.3864 | $ 69.3200 |
| 100+ | $1.1996 | $ 119.9600 |
| 500+ | $1.1147 | $ 557.3500 |
| 1000+ | $1.0776 | $ 1077.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STFU16N65M2 | |
| RoHS | ||
| RDS(on) | 360mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 1.1pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 25W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 11A | |
| Ciss-Input Capacitance | 718pF | |
| Gate Charge(Qg) | - |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.8618 | $ 1.8618 |
| 10+ | $1.5701 | $ 15.7010 |
| 50+ | $1.3864 | $ 69.3200 |
| 100+ | $1.1996 | $ 119.9600 |
| 500+ | $1.1147 | $ 557.3500 |
| 1000+ | $1.0776 | $ 1077.6000 |
