| Hersteller | |
| Hersteller-Teilenummer | STF18N60M2 |
| EBEE-Teilenummer | E8146209 |
| Gehäuse | TO-220FP |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 650V 13A 0.28Ω@10V,6.5A 25W 4V@250uA 1 N-channel TO-220F-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.8851 | $ 0.8851 |
| 10+ | $0.7226 | $ 7.2260 |
| 50+ | $0.6405 | $ 32.0250 |
| 100+ | $0.5601 | $ 56.0100 |
| 500+ | $0.5112 | $ 255.6000 |
| 1000+ | $0.4875 | $ 487.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STF18N60M2 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 280mΩ@10V | |
| Betriebstemperatur - | - | |
| Reverse Transfer Capacitance (Crss-Vds) | 5.6pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 25W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 13A | |
| Ciss-Input Capacitance | 791pF | |
| Output Capacitance(Coss) | 40pF | |
| Gate Charge(Qg) | 21.5nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.8851 | $ 0.8851 |
| 10+ | $0.7226 | $ 7.2260 |
| 50+ | $0.6405 | $ 32.0250 |
| 100+ | $0.5601 | $ 56.0100 |
| 500+ | $0.5112 | $ 255.6000 |
| 1000+ | $0.4875 | $ 487.5000 |
