| Hersteller | |
| Hersteller-Teilenummer | STF15N80K5 |
| EBEE-Teilenummer | E8172493 |
| Gehäuse | TO-220FP |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 800V 14A 35W 0.375Ω@10V,7A 3V@100uA 1 N-channel TO-220F-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.1387 | $ 2.1387 |
| 10+ | $1.8856 | $ 18.8560 |
| 30+ | $1.7270 | $ 51.8100 |
| 100+ | $1.5636 | $ 156.3600 |
| 500+ | $1.4899 | $ 744.9500 |
| 1000+ | $1.4579 | $ 1457.9000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STF15N80K5 | |
| RoHS | ||
| RDS(on) | 375mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 1.5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 35W | |
| Drain to Source Voltage | 800V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 14A | |
| Ciss-Input Capacitance | 1.1nF | |
| Gate Charge(Qg) | 32nC@640V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.1387 | $ 2.1387 |
| 10+ | $1.8856 | $ 18.8560 |
| 30+ | $1.7270 | $ 51.8100 |
| 100+ | $1.5636 | $ 156.3600 |
| 500+ | $1.4899 | $ 744.9500 |
| 1000+ | $1.4579 | $ 1457.9000 |
