| Hersteller | |
| Hersteller-Teilenummer | STF13N65M2 |
| EBEE-Teilenummer | E8500974 |
| Gehäuse | TO-220FP |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 650V 10A 430mΩ@10V,5A 25W 3V@250uA 1 N-channel TO-220FP MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.9797 | $ 0.9797 |
| 10+ | $0.7920 | $ 7.9200 |
| 50+ | $0.6973 | $ 34.8650 |
| 100+ | $0.6043 | $ 60.4300 |
| 500+ | $0.5475 | $ 273.7500 |
| 1000+ | $0.5191 | $ 519.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STF13N65M2 | |
| RoHS | ||
| RDS(on) | 430mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 1.1pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 25W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 10A | |
| Ciss-Input Capacitance | 590pF | |
| Gate Charge(Qg) | 17nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.9797 | $ 0.9797 |
| 10+ | $0.7920 | $ 7.9200 |
| 50+ | $0.6973 | $ 34.8650 |
| 100+ | $0.6043 | $ 60.4300 |
| 500+ | $0.5475 | $ 273.7500 |
| 1000+ | $0.5191 | $ 519.1000 |
