| Hersteller | |
| Hersteller-Teilenummer | STD70N10F4 |
| EBEE-Teilenummer | E8672181 |
| Gehäuse | DPAK(TO-252) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 100V 60A 125W 0.0195Ω@10V,30A 2V@250uA 1 N-channel DPAK(TO-252) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.5071 | $ 2.5071 |
| 10+ | $2.1020 | $ 21.0200 |
| 30+ | $1.8489 | $ 55.4670 |
| 100+ | $1.5911 | $ 159.1100 |
| 500+ | $1.4730 | $ 736.5000 |
| 1000+ | $1.4223 | $ 1422.3000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STD70N10F4 | |
| RoHS | ||
| RDS(on) | 15mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 190pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 125W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 5.8nF | |
| Gate Charge(Qg) | 190nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $2.5071 | $ 2.5071 |
| 10+ | $2.1020 | $ 21.0200 |
| 30+ | $1.8489 | $ 55.4670 |
| 100+ | $1.5911 | $ 159.1100 |
| 500+ | $1.4730 | $ 736.5000 |
| 1000+ | $1.4223 | $ 1422.3000 |
