| Hersteller | |
| Hersteller-Teilenummer | STD4NK60Z-1 |
| EBEE-Teilenummer | E82844909 |
| Gehäuse | IPAK |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 600V 4A 70W 1.7Ω@10V,2A 3V@50uA 1 N-channel IPAK MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.7331 | $ 0.7331 |
| 10+ | $0.7145 | $ 7.1450 |
| 30+ | $0.7021 | $ 21.0630 |
| 75+ | $0.6912 | $ 51.8400 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STD4NK60Z-1 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 2Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 13pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 70W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 510pF | |
| Output Capacitance(Coss) | 67pF | |
| Gate Charge(Qg) | 26nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.7331 | $ 0.7331 |
| 10+ | $0.7145 | $ 7.1450 |
| 30+ | $0.7021 | $ 21.0630 |
| 75+ | $0.6912 | $ 51.8400 |
