| Hersteller | |
| Hersteller-Teilenummer | STD3NK90ZT4 |
| EBEE-Teilenummer | E835685 |
| Gehäuse | TO-252(DPAK) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 900V 3A 90W 4.8Ω@10V,1.5A 4.5V@50uA 1 N-channel TO-252-2(DPAK) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6667 | $ 0.6667 |
| 10+ | $0.5407 | $ 5.4070 |
| 30+ | $0.4785 | $ 14.3550 |
| 100+ | $0.4147 | $ 41.4700 |
| 500+ | $0.3781 | $ 189.0500 |
| 1000+ | $0.3589 | $ 358.9000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STD3NK90ZT4 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 4.8Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 13pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 90W | |
| Drain to Source Voltage | 900V | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Current - Continuous Drain(Id) | 3A | |
| Ciss-Input Capacitance | 590pF | |
| Output Capacitance(Coss) | 63pF | |
| Gate Charge(Qg) | 22.7nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6667 | $ 0.6667 |
| 10+ | $0.5407 | $ 5.4070 |
| 30+ | $0.4785 | $ 14.3550 |
| 100+ | $0.4147 | $ 41.4700 |
| 500+ | $0.3781 | $ 189.0500 |
| 1000+ | $0.3589 | $ 358.9000 |
