| Hersteller | |
| Hersteller-Teilenummer | STD3NK100Z |
| EBEE-Teilenummer | E8200451 |
| Gehäuse | TO-252(DPAK) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 1kV 2.5A 5.4Ω@10V,1.25A 90W 4.5V@50uA 1 N-channel TO-252-2(DPAK) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.1771 | $ 1.1771 |
| 10+ | $0.9953 | $ 9.9530 |
| 30+ | $0.9044 | $ 27.1320 |
| 100+ | $0.8135 | $ 81.3500 |
| 500+ | $0.7593 | $ 379.6500 |
| 1000+ | $0.7321 | $ 732.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STD3NK100Z | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 6Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 12pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 90W | |
| Drain to Source Voltage | 1kV | |
| Gate Threshold Voltage (Vgs(th)) | 4.5V | |
| Current - Continuous Drain(Id) | 2.5A | |
| Ciss-Input Capacitance | 601pF | |
| Output Capacitance(Coss) | 53pF | |
| Gate Charge(Qg) | 18nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.1771 | $ 1.1771 |
| 10+ | $0.9953 | $ 9.9530 |
| 30+ | $0.9044 | $ 27.1320 |
| 100+ | $0.8135 | $ 81.3500 |
| 500+ | $0.7593 | $ 379.6500 |
| 1000+ | $0.7321 | $ 732.1000 |
