| Hersteller | |
| Hersteller-Teilenummer | STB80NF10T4 |
| EBEE-Teilenummer | E8457511 |
| Gehäuse | D2PAK |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 100V 80A 300W 0.015Ω@10V,40A 4V@250uA 1 N-channel D2PAK MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.8946 | $ 1.8946 |
| 10+ | $1.7516 | $ 17.5160 |
| 30+ | $1.6632 | $ 49.8960 |
| 100+ | $1.5716 | $ 157.1600 |
| 500+ | $1.5298 | $ 764.9000 |
| 1000+ | $1.5121 | $ 1512.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STB80NF10T4 | |
| RoHS | ||
| RDS(on) | 15mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 175pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 300W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 80A | |
| Ciss-Input Capacitance | 5.5nF | |
| Gate Charge(Qg) | 182nC@50V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.8946 | $ 1.8946 |
| 10+ | $1.7516 | $ 17.5160 |
| 30+ | $1.6632 | $ 49.8960 |
| 100+ | $1.5716 | $ 157.1600 |
| 500+ | $1.5298 | $ 764.9000 |
| 1000+ | $1.5121 | $ 1512.1000 |
