| Hersteller | |
| Hersteller-Teilenummer | STB60NF06LT4 |
| EBEE-Teilenummer | E8155565 |
| Gehäuse | D2PAK |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 60V 60A 110W 0.014Ω@5V,30A 1V@250uA 1 N-channel TO-263-2 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.6524 | $ 1.6524 |
| 10+ | $1.3797 | $ 13.7970 |
| 30+ | $1.2298 | $ 36.8940 |
| 100+ | $1.0607 | $ 106.0700 |
| 500+ | $0.9841 | $ 492.0500 |
| 1000+ | $0.9507 | $ 950.7000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STB60NF06LT4 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 14mΩ@10V | |
| Betriebstemperatur - | -65℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 125pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 110W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | - | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 2nF | |
| Output Capacitance(Coss) | 360pF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.6524 | $ 1.6524 |
| 10+ | $1.3797 | $ 13.7970 |
| 30+ | $1.2298 | $ 36.8940 |
| 100+ | $1.0607 | $ 106.0700 |
| 500+ | $0.9841 | $ 492.0500 |
| 1000+ | $0.9507 | $ 950.7000 |
