| Hersteller | |
| Hersteller-Teilenummer | STB21N90K5 |
| EBEE-Teilenummer | E8455170 |
| Gehäuse | D2PAK |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 900V 18.5A 250W 0.25Ω@10V,9A 3V@100uA 1 N-channel D2PAK MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $4.6365 | $ 4.6365 |
| 10+ | $4.4291 | $ 44.2910 |
| 30+ | $4.0112 | $ 120.3360 |
| 100+ | $3.9051 | $ 390.5100 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STB21N90K5 | |
| RoHS | ||
| RDS(on) | 250mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 16pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 250W | |
| Drain to Source Voltage | 900V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 18.5A | |
| Ciss-Input Capacitance | 1.645nF | |
| Gate Charge(Qg) | 43nC@720V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $4.6365 | $ 4.6365 |
| 10+ | $4.4291 | $ 44.2910 |
| 30+ | $4.0112 | $ 120.3360 |
| 100+ | $3.9051 | $ 390.5100 |
