| Hersteller | |
| Hersteller-Teilenummer | STB17N80K5 |
| EBEE-Teilenummer | E8500933 |
| Gehäuse | D2PAK |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 800V 14A 290mΩ@10V,7A 170W 4V@250uA 1 N-channel D2PAK MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $3.7869 | $ 3.7869 |
| 10+ | $3.2652 | $ 32.6520 |
| 30+ | $2.9561 | $ 88.6830 |
| 100+ | $2.6440 | $ 264.4000 |
| 500+ | $2.4986 | $ 1249.3000 |
| 1000+ | $2.4344 | $ 2434.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ST STB17N80K5 | |
| RoHS | ||
| RDS(on) | 290mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 420fF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 170W | |
| Drain to Source Voltage | 800V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 14A | |
| Ciss-Input Capacitance | 866pF | |
| Gate Charge(Qg) | 26nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $3.7869 | $ 3.7869 |
| 10+ | $3.2652 | $ 32.6520 |
| 30+ | $2.9561 | $ 88.6830 |
| 100+ | $2.6440 | $ 264.4000 |
| 500+ | $2.4986 | $ 1249.3000 |
| 1000+ | $2.4344 | $ 2434.4000 |
