5% off
| Hersteller | |
| Hersteller-Teilenummer | SI2301 |
| EBEE-Teilenummer | E85278884 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 20V 3A 1.25W 110mΩ@2.5V,2A 1V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0211 | $ 0.4220 |
| 200+ | $0.0164 | $ 3.2800 |
| 600+ | $0.0139 | $ 8.3400 |
| 3000+ | $0.0123 | $ 36.9000 |
| 9000+ | $0.0109 | $ 98.1000 |
| 21000+ | $0.0103 | $ 216.3000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | PAKER SI2301 | |
| RoHS | ||
| RDS(on) | 110mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 87pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1.25W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 3A | |
| Ciss-Input Capacitance | 415pF | |
| Gate Charge(Qg) | 10nC |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0211 | $ 0.4220 |
| 200+ | $0.0164 | $ 3.2800 |
| 600+ | $0.0139 | $ 8.3400 |
| 3000+ | $0.0123 | $ 36.9000 |
| 9000+ | $0.0109 | $ 98.1000 |
| 21000+ | $0.0103 | $ 216.3000 |
