| Hersteller | |
| Hersteller-Teilenummer | FDN537N |
| EBEE-Teilenummer | E83280165 |
| Gehäuse | SOT-23-3 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 30V 6.5A 23mΩ@10V,6.5A 1.5W 3V@250uA 1 N-channel SOT-23-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6190 | $ 0.6190 |
| 10+ | $0.4987 | $ 4.9870 |
| 30+ | $0.4386 | $ 13.1580 |
| 100+ | $0.3626 | $ 36.2600 |
| 500+ | $0.3262 | $ 163.1000 |
| 1000+ | $0.3088 | $ 308.8000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | onsemi FDN537N | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 36mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 35pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.5W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 6.5A | |
| Ciss-Input Capacitance | 465pF | |
| Output Capacitance(Coss) | 180pF | |
| Gate Charge(Qg) | 8.4nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.6190 | $ 0.6190 |
| 10+ | $0.4987 | $ 4.9870 |
| 30+ | $0.4386 | $ 13.1580 |
| 100+ | $0.3626 | $ 36.2600 |
| 500+ | $0.3262 | $ 163.1000 |
| 1000+ | $0.3088 | $ 308.8000 |
