| Hersteller | |
| Hersteller-Teilenummer | FDMS86101DC |
| EBEE-Teilenummer | E8605042 |
| Gehäuse | PQFN-8(5x6) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 100V 60A 7.5mΩ@10V,14.5A 125W 2.7V@250uA 1 N-channel PQFN-8(5x6) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5376 | $ 0.5376 |
| 10+ | $0.4291 | $ 4.2910 |
| 30+ | $0.3812 | $ 11.4360 |
| 100+ | $0.3238 | $ 32.3800 |
| 500+ | $0.2983 | $ 149.1500 |
| 1000+ | $0.2824 | $ 282.4000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | onsemi FDMS86101DC | |
| RoHS | ||
| RDS(on) | 7.5mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 35pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 125W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 2.7V | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 3.135nF | |
| Gate Charge(Qg) | 44nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5376 | $ 0.5376 |
| 10+ | $0.4291 | $ 4.2910 |
| 30+ | $0.3812 | $ 11.4360 |
| 100+ | $0.3238 | $ 32.3800 |
| 500+ | $0.2983 | $ 149.1500 |
| 1000+ | $0.2824 | $ 282.4000 |
