| Hersteller | |
| Hersteller-Teilenummer | NP8205MR |
| EBEE-Teilenummer | E82888099 |
| Gehäuse | SOT-23-6L |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 20V 6.5A 23.7mΩ@2.5V,5.5A 1W 500mV@250uA SOT-23-6 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0442 | $ 0.4420 |
| 100+ | $0.0358 | $ 3.5800 |
| 300+ | $0.0316 | $ 9.4800 |
| 3000+ | $0.0285 | $ 85.5000 |
| 6000+ | $0.0259 | $ 155.4000 |
| 9000+ | $0.0247 | $ 222.3000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | NATLINEAR NP8205MR | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 27mΩ@2.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 55pF | |
| Number | 2 N-Channel | |
| Pd - Power Dissipation | 1.5W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Current - Continuous Drain(Id) | 6.5A | |
| Ciss-Input Capacitance | 430pF | |
| Gate Charge(Qg) | 6.4nC |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 10+ | $0.0442 | $ 0.4420 |
| 100+ | $0.0358 | $ 3.5800 |
| 300+ | $0.0316 | $ 9.4800 |
| 3000+ | $0.0285 | $ 85.5000 |
| 6000+ | $0.0259 | $ 155.4000 |
| 9000+ | $0.0247 | $ 222.3000 |
