5% off
| Hersteller | |
| Hersteller-Teilenummer | AO3400A-MS |
| EBEE-Teilenummer | E819632011 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 30V 5.8A 1.56W 20mΩ@10V 1 N-channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0237 | $ 0.4740 |
| 200+ | $0.0183 | $ 3.6600 |
| 600+ | $0.0154 | $ 9.2400 |
| 3000+ | $0.0136 | $ 40.8000 |
| 9000+ | $0.0121 | $ 108.9000 |
| 21000+ | $0.0112 | $ 235.2000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | MSKSEMI AO3400A-MS | |
| RoHS | ||
| RDS(on) | 20mΩ@10V | |
| Betriebstemperatur - | -55℃~+125℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 36pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.56W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 900mV | |
| Current - Continuous Drain(Id) | 5.8A | |
| Ciss-Input Capacitance | 695pF | |
| Output Capacitance(Coss) | 45pF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0237 | $ 0.4740 |
| 200+ | $0.0183 | $ 3.6600 |
| 600+ | $0.0154 | $ 9.2400 |
| 3000+ | $0.0136 | $ 40.8000 |
| 9000+ | $0.0121 | $ 108.9000 |
| 21000+ | $0.0112 | $ 235.2000 |
