| Hersteller | |
| Hersteller-Teilenummer | MD3N150 |
| EBEE-Teilenummer | E86719399 |
| Gehäuse | TO-3PH |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 1.5kV 3A 250W 5.2mΩ@10V,1.5A 3V@250uA 1 N-channel TO-3PH MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.9623 | $ 0.9623 |
| 10+ | $0.7747 | $ 7.7470 |
| 30+ | $0.6810 | $ 20.4300 |
| 90+ | $0.5888 | $ 52.9920 |
| 510+ | $0.5319 | $ 271.2690 |
| 990+ | $0.5042 | $ 499.1580 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | Minos MD3N150 | |
| RoHS | ||
| Typ | - | |
| Konfiguration | - | |
| RDS(on) | 5.2Ω@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 2.4pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 250W | |
| Drain to Source Voltage | 1.5kV | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 3A | |
| Ciss-Input Capacitance | 1.938nF | |
| Output Capacitance(Coss) | - | |
| Gate Charge(Qg) | 9.3nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.9623 | $ 0.9623 |
| 10+ | $0.7747 | $ 7.7470 |
| 30+ | $0.6810 | $ 20.4300 |
| 90+ | $0.5888 | $ 52.9920 |
| 510+ | $0.5319 | $ 271.2690 |
| 990+ | $0.5042 | $ 499.1580 |
