| Hersteller | |
| Hersteller-Teilenummer | IRFB4227 |
| EBEE-Teilenummer | E86719384 |
| Gehäuse | TO-220EW |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 200V 65A 20mΩ@10V,46A 150W 5V@250uA 1 N-channel TO-220EW MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.1686 | $ 1.1686 |
| 10+ | $0.9680 | $ 9.6800 |
| 50+ | $0.8311 | $ 41.5550 |
| 100+ | $0.7053 | $ 70.5300 |
| 500+ | $0.6512 | $ 325.6000 |
| 1000+ | $0.6257 | $ 625.7000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | Minos IRFB4227 | |
| RoHS | ||
| RDS(on) | 20mΩ@10V | |
| Betriebstemperatur - | - | |
| Reverse Transfer Capacitance (Crss-Vds) | 165pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 150W | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 65A | |
| Ciss-Input Capacitance | 2.2nF | |
| Gate Charge(Qg) | 58nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.1686 | $ 1.1686 |
| 10+ | $0.9680 | $ 9.6800 |
| 50+ | $0.8311 | $ 41.5550 |
| 100+ | $0.7053 | $ 70.5300 |
| 500+ | $0.6512 | $ 325.6000 |
| 1000+ | $0.6257 | $ 625.7000 |
