| Hersteller | |
| Hersteller-Teilenummer | DN3525N8-G |
| EBEE-Teilenummer | E8616348 |
| Gehäuse | SOT-89-3 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 250V 300mA 1.6W 6Ω@0V,200mA 1.5V@1mA 1 N-channel SOT-89-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.6234 | $ 1.6234 |
| 10+ | $1.3662 | $ 13.6620 |
| 30+ | $1.2258 | $ 36.7740 |
| 100+ | $1.0665 | $ 106.6500 |
| 500+ | $0.9955 | $ 497.7500 |
| 1000+ | $0.9640 | $ 964.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Transistoren/Thyristoren ,MOSFET | |
| Datenblatt | Microchip Tech DN3525N8-G | |
| RoHS | ||
| RDS(on) | 6Ω@0V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 20pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.6W | |
| Drain to Source Voltage | 250V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Current - Continuous Drain(Id) | 300mA | |
| Ciss-Input Capacitance | 350pF |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $1.6234 | $ 1.6234 |
| 10+ | $1.3662 | $ 13.6620 |
| 30+ | $1.2258 | $ 36.7740 |
| 100+ | $1.0665 | $ 106.6500 |
| 500+ | $0.9955 | $ 497.7500 |
| 1000+ | $0.9640 | $ 964.0000 |
