| Hersteller | |
| Hersteller-Teilenummer | MS24N80HCE0 |
| EBEE-Teilenummer | E819724675 |
| Gehäuse | TO-263 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | TO-263 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $3.0210 | $ 3.0210 |
| 10+ | $2.5486 | $ 25.4860 |
| 30+ | $2.2529 | $ 67.5870 |
| 100+ | $1.9508 | $ 195.0800 |
| 500+ | $1.8142 | $ 907.1000 |
| 800+ | $1.7548 | $ 1403.8400 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | MASPOWER MS24N80HCE0 | |
| RoHS | ||
| Typ | - | |
| RDS(on) | 205mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 1.8pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 227W | |
| Drain to Source Voltage | 800V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Current - Continuous Drain(Id) | 24A | |
| Ciss-Input Capacitance | 2.03nF | |
| Output Capacitance(Coss) | 83pF | |
| Gate Charge(Qg) | 46nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $3.0210 | $ 3.0210 |
| 10+ | $2.5486 | $ 25.4860 |
| 30+ | $2.2529 | $ 67.5870 |
| 100+ | $1.9508 | $ 195.0800 |
| 500+ | $1.8142 | $ 907.1000 |
| 800+ | $1.7548 | $ 1403.8400 |
