25% off
| Hersteller | |
| Hersteller-Teilenummer | FDMC86160 |
| EBEE-Teilenummer | E83647067 |
| Gehäuse | DFN5x6-8L |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 100V 40A 20mΩ@10V,8A 72W 2.5V@250uA 1 N-channel DFN-8(4.9x5.7) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5735 | $ 0.5735 |
| 10+ | $0.4651 | $ 4.6510 |
| 30+ | $0.4097 | $ 12.2910 |
| 100+ | $0.3554 | $ 35.5400 |
| 500+ | $0.3229 | $ 161.4500 |
| 1000+ | $0.3072 | $ 307.2000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | Leiditech FDMC86160 | |
| RoHS | ||
| RDS(on) | 26mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 4.1pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 72W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 40A | |
| Ciss-Input Capacitance | 1.1906nF | |
| Gate Charge(Qg) | 19.8nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5735 | $ 0.5735 |
| 10+ | $0.4651 | $ 4.6510 |
| 30+ | $0.4097 | $ 12.2910 |
| 100+ | $0.3554 | $ 35.5400 |
| 500+ | $0.3229 | $ 161.4500 |
| 1000+ | $0.3072 | $ 307.2000 |
