| Hersteller | |
| Hersteller-Teilenummer | IRF7341TRPBF |
| EBEE-Teilenummer | E821791 |
| Gehäuse | SO-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | EAR99 |
| Beschreibung | 55V 4.7A 2W 0.05Ω@10V,4.7A 1V@250uA 2 N-Channel SOIC-8 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.3534 | $ 1.7670 |
| 50+ | $0.2909 | $ 14.5450 |
| 150+ | $0.2641 | $ 39.6150 |
| 500+ | $0.1907 | $ 95.3500 |
| 2500+ | $0.1758 | $ 439.5000 |
| 4000+ | $0.1669 | $ 667.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,FET, MOSFET Arrays | |
| Datenblatt | Infineon IRF7341TRPBF | |
| RoHS | ||
| Temperatur | -55℃~+150℃ | |
| Typ | N-Channel | |
| Reverse Transfer Capacitance (Crss-Vds) | 71pF | |
| Number | 2 N-Channel | |
| Pd - Power Dissipation | 2W | |
| Drain to Source Voltage | 55V | |
| Gate Threshold Voltage (Vgs(th)) | 1V | |
| Current - Continuous Drain(Id) | 4.7A |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.3534 | $ 1.7670 |
| 50+ | $0.2909 | $ 14.5450 |
| 150+ | $0.2641 | $ 39.6150 |
| 500+ | $0.1907 | $ 95.3500 |
| 2500+ | $0.1758 | $ 439.5000 |
| 4000+ | $0.1669 | $ 667.6000 |
