| Hersteller | |
| Hersteller-Teilenummer | 80N02F |
| EBEE-Teilenummer | E87437081 |
| Gehäuse | DFN5x6 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 20V 80A 58W 3.5mΩ 400mV@250uA 1 N-channel DFN5x6 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1346 | $ 0.6730 |
| 50+ | $0.1064 | $ 5.3200 |
| 150+ | $0.0923 | $ 13.8450 |
| 500+ | $0.0818 | $ 40.9000 |
| 2500+ | $0.0733 | $ 183.2500 |
| 5000+ | $0.0691 | $ 345.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | HL 80N02F | |
| RoHS | ||
| RDS(on) | 3.5mΩ | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 386pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 58W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 400mV | |
| Current - Continuous Drain(Id) | 80A | |
| Ciss-Input Capacitance | 2.5nF |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1346 | $ 0.6730 |
| 50+ | $0.1064 | $ 5.3200 |
| 150+ | $0.0923 | $ 13.8450 |
| 500+ | $0.0818 | $ 40.9000 |
| 2500+ | $0.0733 | $ 183.2500 |
| 5000+ | $0.0691 | $ 345.5000 |
