| Hersteller | |
| Hersteller-Teilenummer | 10P10 |
| EBEE-Teilenummer | E821882491 |
| Gehäuse | TO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 100V 10A 180mΩ 1 Piece P-Channel TO-252 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1624 | $ 0.8120 |
| 50+ | $0.1276 | $ 6.3800 |
| 150+ | $0.1126 | $ 16.8900 |
| 500+ | $0.0940 | $ 47.0000 |
| 2500+ | $0.0857 | $ 214.2500 |
| 5000+ | $0.0807 | $ 403.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | HL 10P10 | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 255mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 29pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 10W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 10A | |
| Ciss-Input Capacitance | 1.228nF | |
| Output Capacitance(Coss) | 41pF | |
| Gate Charge(Qg) | 19nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1624 | $ 0.8120 |
| 50+ | $0.1276 | $ 6.3800 |
| 150+ | $0.1126 | $ 16.8900 |
| 500+ | $0.0940 | $ 47.0000 |
| 2500+ | $0.0857 | $ 214.2500 |
| 5000+ | $0.0807 | $ 403.5000 |
