| Hersteller | |
| Hersteller-Teilenummer | 7N65F |
| EBEE-Teilenummer | E82962213 |
| Gehäuse | ITO-220AB-3 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 650V 7A 0.95Ω@10V,3.5A 40W 2V@250uA 1 N-channel ITO-220AB-3 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2703 | $ 1.3515 |
| 50+ | $0.1998 | $ 9.9900 |
| 150+ | $0.1764 | $ 26.4600 |
| 500+ | $0.1472 | $ 73.6000 |
| 2000+ | $0.1342 | $ 268.4000 |
| 5000+ | $0.1264 | $ 632.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | GOODWORK 7N65F | |
| RoHS | ||
| RDS(on) | 1.3Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 40pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 48W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 7A | |
| Ciss-Input Capacitance | 1.21nF | |
| Output Capacitance(Coss) | 180pF | |
| Gate Charge(Qg) | 29nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2703 | $ 1.3515 |
| 50+ | $0.1998 | $ 9.9900 |
| 150+ | $0.1764 | $ 26.4600 |
| 500+ | $0.1472 | $ 73.6000 |
| 2000+ | $0.1342 | $ 268.4000 |
| 5000+ | $0.1264 | $ 632.0000 |
