5% off
| Hersteller | |
| Hersteller-Teilenummer | 65N06 |
| EBEE-Teilenummer | E822399518 |
| Gehäuse | TO-220 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | TO-220 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2860 | $ 1.4300 |
| 50+ | $0.2245 | $ 11.2250 |
| 150+ | $0.1982 | $ 29.7300 |
| 500+ | $0.1654 | $ 82.7000 |
| 2500+ | $0.1508 | $ 377.0000 |
| 5000+ | $0.1420 | $ 710.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | GOODWORK 65N06 | |
| RoHS | ||
| RDS(on) | 16mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 90pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 120W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 65A | |
| Ciss-Input Capacitance | 1.5nF | |
| Output Capacitance(Coss) | 300pF | |
| Gate Charge(Qg) | 30nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2860 | $ 1.4300 |
| 50+ | $0.2245 | $ 11.2250 |
| 150+ | $0.1982 | $ 29.7300 |
| 500+ | $0.1654 | $ 82.7000 |
| 2500+ | $0.1508 | $ 377.0000 |
| 5000+ | $0.1420 | $ 710.0000 |
