| Hersteller | |
| Hersteller-Teilenummer | 50N03 |
| EBEE-Teilenummer | E821713997 |
| Gehäuse | TO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 30V 50A 6.5mΩ@10V,25A 32.5W 2.5V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0925 | $ 0.4625 |
| 50+ | $0.0742 | $ 3.7100 |
| 150+ | $0.0651 | $ 9.7650 |
| 500+ | $0.0583 | $ 29.1500 |
| 2500+ | $0.0528 | $ 132.0000 |
| 5000+ | $0.0500 | $ 250.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | GOODWORK 50N03 | |
| RoHS | ||
| Typ | N-Channel | |
| Konfiguration | - | |
| RDS(on) | 7.5mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 151pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 32.5W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 50A | |
| Ciss-Input Capacitance | 1.14nF | |
| Output Capacitance(Coss) | 175pF | |
| Gate Charge(Qg) | 13.3nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0925 | $ 0.4625 |
| 50+ | $0.0742 | $ 3.7100 |
| 150+ | $0.0651 | $ 9.7650 |
| 500+ | $0.0583 | $ 29.1500 |
| 2500+ | $0.0528 | $ 132.0000 |
| 5000+ | $0.0500 | $ 250.0000 |
