5% off
| Hersteller | |
| Hersteller-Teilenummer | 16N65F |
| EBEE-Teilenummer | E817702913 |
| Gehäuse | TO-220F |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 650V 16A 580mΩ 1 N-channel TO-220F MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5388 | $ 0.5388 |
| 10+ | $0.4381 | $ 4.3810 |
| 50+ | $0.3680 | $ 18.4000 |
| 100+ | $0.3183 | $ 31.8300 |
| 500+ | $0.2878 | $ 143.9000 |
| 1000+ | $0.2731 | $ 273.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | GOODWORK 16N65F | |
| RoHS | ||
| Typ | - | |
| RDS(on) | 550mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 15pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 98W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 16A | |
| Ciss-Input Capacitance | 2.74nF | |
| Output Capacitance(Coss) | 214pF | |
| Gate Charge(Qg) | 71nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.5388 | $ 0.5388 |
| 10+ | $0.4381 | $ 4.3810 |
| 50+ | $0.3680 | $ 18.4000 |
| 100+ | $0.3183 | $ 31.8300 |
| 500+ | $0.2878 | $ 143.9000 |
| 1000+ | $0.2731 | $ 273.1000 |
