| Hersteller | |
| Hersteller-Teilenummer | GL18N30FA9 |
| EBEE-Teilenummer | E83025198 |
| Gehäuse | TO-220F |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 300V 18A 45W 220mΩ@10V,10A 4V@250uA TO-220F MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4904 | $ 0.4904 |
| 10+ | $0.4376 | $ 4.3760 |
| 50+ | $0.4119 | $ 20.5950 |
| 100+ | $0.3848 | $ 38.4800 |
| 500+ | $0.3697 | $ 184.8500 |
| 1000+ | $0.3621 | $ 362.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | GL GL18N30FA9 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 220mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 10pF | |
| Pd - Power Dissipation | 45W | |
| Drain to Source Voltage | 300V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 18A | |
| Ciss-Input Capacitance | 1.9nF | |
| Gate Charge(Qg) | 33nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4904 | $ 0.4904 |
| 10+ | $0.4376 | $ 4.3760 |
| 50+ | $0.4119 | $ 20.5950 |
| 100+ | $0.3848 | $ 38.4800 |
| 500+ | $0.3697 | $ 184.8500 |
| 1000+ | $0.3621 | $ 362.1000 |
