| Hersteller | |
| Hersteller-Teilenummer | 2N7002 |
| EBEE-Teilenummer | E82926143 |
| Gehäuse | SOT-23 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 60V 115mA 7.5Ω@10V,500mA 225mW 2.5V@250uA 1 N-channel SOT-23 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 50+ | $0.0107 | $ 0.5350 |
| 500+ | $0.0084 | $ 4.2000 |
| 3000+ | $0.0074 | $ 22.2000 |
| 6000+ | $0.0066 | $ 39.6000 |
| 24000+ | $0.0060 | $ 144.0000 |
| 51000+ | $0.0056 | $ 285.6000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | FOSAN 2N7002 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 1.2Ω@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 1.9pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 350mW | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 1.5V | |
| Current - Continuous Drain(Id) | 340mA | |
| Ciss-Input Capacitance | 27.5pF | |
| Output Capacitance(Coss) | 2.75pF | |
| Gate Charge(Qg) | 1.6nC |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 50+ | $0.0107 | $ 0.5350 |
| 500+ | $0.0084 | $ 4.2000 |
| 3000+ | $0.0074 | $ 22.2000 |
| 6000+ | $0.0066 | $ 39.6000 |
| 24000+ | $0.0060 | $ 144.0000 |
| 51000+ | $0.0056 | $ 285.6000 |
