20% off
| Hersteller | |
| Hersteller-Teilenummer | E18P100KH |
| EBEE-Teilenummer | E829781156 |
| Gehäuse | PDFN5x6-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 100V 19A 100mΩ@10V,6A 79W 2.5V@250uA 1 Piece P-Channel PDFN-8(5x6) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1913 | $ 0.9565 |
| 50+ | $0.1529 | $ 7.6450 |
| 150+ | $0.1364 | $ 20.4600 |
| 500+ | $0.1158 | $ 57.9000 |
| 2500+ | $0.0943 | $ 235.7500 |
| 5000+ | $0.0888 | $ 444.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | Existar E18P100KH | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 100mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 70pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 79W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 19A | |
| Ciss-Input Capacitance | 3.69nF | |
| Output Capacitance(Coss) | 85pF | |
| Gate Charge(Qg) | 72nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1913 | $ 0.9565 |
| 50+ | $0.1529 | $ 7.6450 |
| 150+ | $0.1364 | $ 20.4600 |
| 500+ | $0.1158 | $ 57.9000 |
| 2500+ | $0.0943 | $ 235.7500 |
| 5000+ | $0.0888 | $ 444.0000 |
