10% off
| Hersteller | |
| Hersteller-Teilenummer | E100N4P0HL1 |
| EBEE-Teilenummer | E829781176 |
| Gehäuse | PDFN-8(5x6) |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 100V 83A 52W 4mΩ@10V,20A 2.5V@250uA 1 N-channel PDFN-8(5x6) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4773 | $ 0.4773 |
| 10+ | $0.3816 | $ 3.8160 |
| 30+ | $0.3416 | $ 10.2480 |
| 100+ | $0.2902 | $ 29.0200 |
| 500+ | $0.2544 | $ 127.2000 |
| 1000+ | $0.2401 | $ 240.1000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | Existar E100N4P0HL1 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 4mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 34.4pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 52W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 83A | |
| Ciss-Input Capacitance | 3.841nF | |
| Gate Charge(Qg) | 74.2nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 1+ | $0.4773 | $ 0.4773 |
| 10+ | $0.3816 | $ 3.8160 |
| 30+ | $0.3416 | $ 10.2480 |
| 100+ | $0.2902 | $ 29.0200 |
| 500+ | $0.2544 | $ 127.2000 |
| 1000+ | $0.2401 | $ 240.1000 |
