20% off
| Hersteller | |
| Hersteller-Teilenummer | E100N010HL1 |
| EBEE-Teilenummer | E829781179 |
| Gehäuse | PDFN5x6-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 100V 54A 52W 10mΩ@10V,54A 3V@250uA 1 N-channel PDFN-8(5x6) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.3061 | $ 1.5305 |
| 50+ | $0.2446 | $ 12.2300 |
| 150+ | $0.2182 | $ 32.7300 |
| 500+ | $0.1854 | $ 92.7000 |
| 2500+ | $0.1509 | $ 377.2500 |
| 5000+ | $0.1421 | $ 710.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | Existar E100N010HL1 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 10mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 103pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 52W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 54A | |
| Ciss-Input Capacitance | 1.52nF | |
| Output Capacitance(Coss) | 835pF | |
| Gate Charge(Qg) | 30nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.3061 | $ 1.5305 |
| 50+ | $0.2446 | $ 12.2300 |
| 150+ | $0.2182 | $ 32.7300 |
| 500+ | $0.1854 | $ 92.7000 |
| 2500+ | $0.1509 | $ 377.2500 |
| 5000+ | $0.1421 | $ 710.5000 |
