| Hersteller | |
| Hersteller-Teilenummer | ES2102EI |
| EBEE-Teilenummer | E839832204 |
| Gehäuse | SOT-323 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 20V 4.5A 37mΩ@4.5V,4A 1.4W 400mV@250uA 1 N-channel SOT-323 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0227 | $ 0.4540 |
| 200+ | $0.0177 | $ 3.5400 |
| 600+ | $0.0149 | $ 8.9400 |
| 3000+ | $0.0132 | $ 39.6000 |
| 9000+ | $0.0118 | $ 106.2000 |
| 21000+ | $0.0110 | $ 231.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | ElecSuper ES2102EI | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 37mΩ@4.5V;47mΩ@2.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 44pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.4W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Current - Continuous Drain(Id) | 4.5A | |
| Ciss-Input Capacitance | 323pF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 20+ | $0.0227 | $ 0.4540 |
| 200+ | $0.0177 | $ 3.5400 |
| 600+ | $0.0149 | $ 8.9400 |
| 3000+ | $0.0132 | $ 39.6000 |
| 9000+ | $0.0118 | $ 106.2000 |
| 21000+ | $0.0110 | $ 231.0000 |
