| Hersteller | |
| Hersteller-Teilenummer | DOU50N06 |
| EBEE-Teilenummer | E842412134 |
| Gehäuse | TO-251 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | TO-251 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1051 | $ 0.5255 |
| 50+ | $0.0826 | $ 4.1300 |
| 150+ | $0.0713 | $ 10.6950 |
| 525+ | $0.0628 | $ 32.9700 |
| 2475+ | $0.0561 | $ 138.8475 |
| 5025+ | $0.0527 | $ 264.8175 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | DOINGTER DOU50N06 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 11mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 120pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 75W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Current - Continuous Drain(Id) | 50A | |
| Ciss-Input Capacitance | 1.928nF | |
| Gate Charge(Qg) | 47nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1051 | $ 0.5255 |
| 50+ | $0.0826 | $ 4.1300 |
| 150+ | $0.0713 | $ 10.6950 |
| 525+ | $0.0628 | $ 32.9700 |
| 2475+ | $0.0561 | $ 138.8475 |
| 5025+ | $0.0527 | $ 264.8175 |
