| Hersteller | |
| Hersteller-Teilenummer | DOU20P06 |
| EBEE-Teilenummer | E842412137 |
| Gehäuse | TO-251 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | TO-251 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1122 | $ 0.5610 |
| 50+ | $0.0881 | $ 4.4050 |
| 150+ | $0.0761 | $ 11.4150 |
| 525+ | $0.0671 | $ 35.2275 |
| 2475+ | $0.0599 | $ 148.2525 |
| 5025+ | $0.0562 | $ 282.4050 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | DOINGTER DOU20P06 | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 50mΩ@10V;60mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 560pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 50W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 1.961nF | |
| Output Capacitance(Coss) | 725pF | |
| Gate Charge(Qg) | 82.32nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1122 | $ 0.5610 |
| 50+ | $0.0881 | $ 4.4050 |
| 150+ | $0.0761 | $ 11.4150 |
| 525+ | $0.0671 | $ 35.2275 |
| 2475+ | $0.0599 | $ 148.2525 |
| 5025+ | $0.0562 | $ 282.4050 |
