| Hersteller | |
| Hersteller-Teilenummer | DOU15N10 |
| EBEE-Teilenummer | E842412136 |
| Gehäuse | TO-251 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | TO-251 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0807 | $ 0.4035 |
| 50+ | $0.0638 | $ 3.1900 |
| 150+ | $0.0554 | $ 8.3100 |
| 525+ | $0.0490 | $ 25.7250 |
| 2475+ | $0.0440 | $ 108.9000 |
| 5025+ | $0.0414 | $ 208.0350 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | DOINGTER DOU15N10 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 75mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 43pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 46W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 1.8V | |
| Current - Continuous Drain(Id) | 15A | |
| Ciss-Input Capacitance | 1.029nF | |
| Output Capacitance(Coss) | 54pF | |
| Gate Charge(Qg) | 5.7nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.0807 | $ 0.4035 |
| 50+ | $0.0638 | $ 3.1900 |
| 150+ | $0.0554 | $ 8.3100 |
| 525+ | $0.0490 | $ 25.7250 |
| 2475+ | $0.0440 | $ 108.9000 |
| 5025+ | $0.0414 | $ 208.0350 |
