| Hersteller | |
| Hersteller-Teilenummer | DOU100N03 |
| EBEE-Teilenummer | E842412132 |
| Gehäuse | TO-251 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | TO-251 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1048 | $ 0.5240 |
| 50+ | $0.0828 | $ 4.1400 |
| 150+ | $0.0719 | $ 10.7850 |
| 525+ | $0.0636 | $ 33.3900 |
| 2475+ | $0.0571 | $ 141.3225 |
| 5025+ | $0.0538 | $ 270.3450 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | DOINGTER DOU100N03 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 3.5mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 240pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 90W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 3V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 1.95nF | |
| Output Capacitance(Coss) | 320pF | |
| Gate Charge(Qg) | 42nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1048 | $ 0.5240 |
| 50+ | $0.0828 | $ 4.1400 |
| 150+ | $0.0719 | $ 10.7850 |
| 525+ | $0.0636 | $ 33.3900 |
| 2475+ | $0.0571 | $ 141.3225 |
| 5025+ | $0.0538 | $ 270.3450 |
