| Hersteller | |
| Hersteller-Teilenummer | DOP70P03 |
| EBEE-Teilenummer | E841384270 |
| Gehäuse | TO-220 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 30V 70A 7.5mΩ@10V,20A 110W 1.5V@20A 1 Piece P-Channel TO-220 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2617 | $ 1.3085 |
| 50+ | $0.2060 | $ 10.3000 |
| 150+ | $0.1820 | $ 27.3000 |
| 500+ | $0.1522 | $ 76.1000 |
| 2500+ | $0.1389 | $ 347.2500 |
| 5000+ | $0.1310 | $ 655.0000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | DOINGTER DOP70P03 | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 7.5mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 342pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 110W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 70A | |
| Ciss-Input Capacitance | 3.15nF | |
| Gate Charge(Qg) | 84nC |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2617 | $ 1.3085 |
| 50+ | $0.2060 | $ 10.3000 |
| 150+ | $0.1820 | $ 27.3000 |
| 500+ | $0.1522 | $ 76.1000 |
| 2500+ | $0.1389 | $ 347.2500 |
| 5000+ | $0.1310 | $ 655.0000 |
