| Hersteller | |
| Hersteller-Teilenummer | DOP45N10 |
| EBEE-Teilenummer | E841384535 |
| Gehäuse | TO-220 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 100V 45A 95W 16mΩ@10V,10A 2.2V@250uA 1 N-channel TO-220 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1851 | $ 0.9255 |
| 50+ | $0.1616 | $ 8.0800 |
| 150+ | $0.1516 | $ 22.7400 |
| 500+ | $0.1390 | $ 69.5000 |
| 2500+ | $0.1334 | $ 333.5000 |
| 5000+ | $0.1301 | $ 650.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | DOINGTER DOP45N10 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 16mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 36pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 95W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Current - Continuous Drain(Id) | 45A | |
| Ciss-Input Capacitance | 916pF | |
| Gate Charge(Qg) | 15.6nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1851 | $ 0.9255 |
| 50+ | $0.1616 | $ 8.0800 |
| 150+ | $0.1516 | $ 22.7400 |
| 500+ | $0.1390 | $ 69.5000 |
| 2500+ | $0.1334 | $ 333.5000 |
| 5000+ | $0.1301 | $ 650.5000 |
