| Hersteller | |
| Hersteller-Teilenummer | DOP20P06 |
| EBEE-Teilenummer | E841384534 |
| Gehäuse | TO-220 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 60V 20A 53W 68mΩ@10V,9A 2.5V@250uA 1 Piece P-Channel TO-220 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2262 | $ 1.1310 |
| 50+ | $0.1802 | $ 9.0100 |
| 150+ | $0.1605 | $ 24.0750 |
| 500+ | $0.1359 | $ 67.9500 |
| 2500+ | $0.1249 | $ 312.2500 |
| 5000+ | $0.1183 | $ 591.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | DOINGTER DOP20P06 | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 90mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 61.95pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 53W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 20A | |
| Ciss-Input Capacitance | 2.015nF | |
| Gate Charge(Qg) | 82.32nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.2262 | $ 1.1310 |
| 50+ | $0.1802 | $ 9.0100 |
| 150+ | $0.1605 | $ 24.0750 |
| 500+ | $0.1359 | $ 67.9500 |
| 2500+ | $0.1249 | $ 312.2500 |
| 5000+ | $0.1183 | $ 591.5000 |
