| Hersteller | |
| Hersteller-Teilenummer | DOP17P06 |
| EBEE-Teilenummer | E841384275 |
| Gehäuse | TO-220 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 60V 17A 52.1W 90mΩ@10V,12A 2.5V@250uA 1 Piece P-Channel TO-220 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1481 | $ 0.7405 |
| 50+ | $0.1288 | $ 6.4400 |
| 150+ | $0.1206 | $ 18.0900 |
| 500+ | $0.1102 | $ 55.1000 |
| 2500+ | $0.1056 | $ 264.0000 |
| 5000+ | $0.1029 | $ 514.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | DOINGTER DOP17P06 | |
| RoHS | ||
| Typ | P-Channel | |
| RDS(on) | 90mΩ@10V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 49pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 52.1W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 17A | |
| Ciss-Input Capacitance | 1.079nF | |
| Output Capacitance(Coss) | 72pF | |
| Gate Charge(Qg) | [email protected] |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1481 | $ 0.7405 |
| 50+ | $0.1288 | $ 6.4400 |
| 150+ | $0.1206 | $ 18.0900 |
| 500+ | $0.1102 | $ 55.1000 |
| 2500+ | $0.1056 | $ 264.0000 |
| 5000+ | $0.1029 | $ 514.5000 |
