| Hersteller | |
| Hersteller-Teilenummer | DON45P04 |
| EBEE-Teilenummer | E842386235 |
| Gehäuse | DFN5x6-8 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | DFN-8(5x6) MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1536 | $ 0.7680 |
| 50+ | $0.1233 | $ 6.1650 |
| 150+ | $0.1081 | $ 16.2150 |
| 500+ | $0.0967 | $ 48.3500 |
| 2500+ | $0.0876 | $ 219.0000 |
| 5000+ | $0.0831 | $ 415.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | DOINGTER DON45P04 | |
| RoHS | ||
| Typ | P-Channel | |
| Konfiguration | - | |
| RDS(on) | 17mΩ@4.5V | |
| Betriebstemperatur - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 215.25pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 31W | |
| Drain to Source Voltage | 40V | |
| Gate Threshold Voltage (Vgs(th)) | 2.2V | |
| Current - Continuous Drain(Id) | 45A | |
| Ciss-Input Capacitance | 2nF | |
| Output Capacitance(Coss) | 270.9pF | |
| Gate Charge(Qg) | 36.75nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1536 | $ 0.7680 |
| 50+ | $0.1233 | $ 6.1650 |
| 150+ | $0.1081 | $ 16.2150 |
| 500+ | $0.0967 | $ 48.3500 |
| 2500+ | $0.0876 | $ 219.0000 |
| 5000+ | $0.0831 | $ 415.5000 |
