| Hersteller | |
| Hersteller-Teilenummer | DOD70N07 |
| EBEE-Teilenummer | E841416028 |
| Gehäuse | TO-252 |
| Kundennummer | |
| Datenblatt | |
| EDA-Modelle | |
| ECCN | - |
| Beschreibung | 70V 70A 116W 8.6mΩ@10V,30A 4V@250uA 1 N-channel TO-252 MOSFETs ROHS |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1757 | $ 0.8785 |
| 50+ | $0.1392 | $ 6.9600 |
| 150+ | $0.1236 | $ 18.5400 |
| 500+ | $0.1040 | $ 52.0000 |
| 2500+ | $0.0953 | $ 238.2500 |
| 5000+ | $0.0901 | $ 450.5000 |
| Typ | Beschreibung | Alle auswählen |
|---|---|---|
| Kategorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Datenblatt | DOINGTER DOD70N07 | |
| RoHS | ||
| Typ | N-Channel | |
| RDS(on) | 8.6mΩ@10V | |
| Betriebstemperatur - | -55℃~+175℃ | |
| Reverse Transfer Capacitance (Crss-Vds) | 225pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 116W | |
| Drain to Source Voltage | 70V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 70A | |
| Ciss-Input Capacitance | 4nF | |
| Gate Charge(Qg) | 33nC@10V |
| Menge | Stückpreis | Gesamtpreis |
|---|---|---|
| 5+ | $0.1757 | $ 0.8785 |
| 50+ | $0.1392 | $ 6.9600 |
| 150+ | $0.1236 | $ 18.5400 |
| 500+ | $0.1040 | $ 52.0000 |
| 2500+ | $0.0953 | $ 238.2500 |
| 5000+ | $0.0901 | $ 450.5000 |
